| HS Code | 915881 |
| Chemical Formula | CH3CH2CH2OH |
| Cas Number | 71-23-8 |
| Molecular Weight | 60.10 g/mol |
| Purity | ≥99.9% |
| Boiling Point | 97.2°C |
| Melting Point | -127°C |
| Flash Point | 22°C (closed cup) |
| Density | 0.803 g/cm³ at 20°C |
| Refractive Index | 1.385 at 20°C |
| Water Content | ≤10 ppm |
| Vapor Pressure | 1.9 kPa at 20°C |
| Viscosity | 2.2 mPa·s at 20°C |
As an accredited N-Propanol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 4 L high-purity glass bottles with nitrogen sealing, ensuring N-Propanol Electronic Grade remains contamination-free. |
| Container Loading (20′ FCL) | N-Propanol Electronic Grade is loaded into a 20′ FCL using clean, dedicated containers with securely fastened drums or IBCs to ensure purity. |
| Shipping | N-Propanol Electronic Grade ships as a high-purity flammable liquid (UN1277, Class 3) in sealed, epoxy-lined or stainless steel drums under inert nitrogen. Containers are secured upright, kept away from ignition sources, and transported via dedicated, dry, temperature-controlled trucks with full hazmat labeling, documentation, and spill-contingency equipment to preserve purity and safety. |
| Storage | Store N‑Propanol Electronic Grade in a clean, dry, cool, well‑ventilated area away from ignition sources and incompatible oxidizers. Use tightly sealed stainless steel, glass, or HDPE containers to maintain high purity and prevent moisture/particulate contamination. Keep under inert gas if possible, and follow strict handling and container integrity protocols. |
| Shelf Life | Shelf life is typically 24 months from manufacture when stored sealed, cool, dry, and protected from moisture and contamination. |
During positive-tone photoresist processing on 300 mm silicon wafers, the edge bead removal step dispenses electronic-grade n-propanol through a top-side EBR nozzle positioned 2–5 mm from the substrate edge while the wafer rotates at 800–2,000 rpm. The solvent dissolves partially dried photoresist inside the edge exclusion zone and prevents flake generation during the subsequent hotplate bake. A separate backside rinse nozzle applies n-propanol to remove resist droplets and silicon particles from the wafer backside, reducing contamination transfer to the electrostatic chuck and transfer blade. On production coating tracks, EBR flow rate is controlled between 0.5 mL/s and 2.0 mL/s, and dispense time ranges from 1.5 s to 3.5 s depending on resist viscosity and edge bead width. Process conflict arises at both ends of the rotation range: below 800 rpm solvent wicking can carry dissolved resist into active die area, while above 2,000 rpm aerosolized droplets create secondary contamination along the wafer transport path. Electronic-grade incoming specification controls water by Karl Fischer titration per ASTM E203, because water content above the supplier limit slows evaporation and may leave irregular edge bead boundaries. Cation levels are typically checked by ICP-MS with acceptance thresholds at or below 10 ppb for sodium, potassium, calcium, and iron, and particle counts are kept below 100 count/mL at ≥0.3 µm. Point-of-use filtration through 0.05 µm membrane filters is standard; filter replacements are based on differential pressure trend data rather than fixed time intervals. The EBR module operates on an automated cassette-to-cassette track where exhausted air is pulled through the chemical bath and spin bowl to manage solvent vapor.
Flat-panel display lines processing Gen 8.5 glass require a final low-surface-tension rinse to remove cerium oxide polishing residues, adsorbed organic films, and residual moisture before indium tin oxide sputtering. The surface tension of n-propanol at 25°C is approximately 23.7 mN/m, compared with 72.8 mN/m for water, allowing the solvent to penetrate between particles and the glass surface and displace water from microcracks. In a horizontal flat-panel cleaner, megasonic transducers operating at 0.8–1.2 MHz are combined with a final rinse module using 100% electronic-grade n-propanol; contact time is typically 20–60 s depending on glass generation and line speed. Air-knife dryers with HEPA-filtered air meeting ISO 14644-1 Class 5 cleanroom limits then remove the solvent film without recontaminating the surface. Metal contamination is the dominant risk before ITO deposition because sodium and calcium ions can migrate into the transparent conductive oxide and shift sheet resistance. Electronic-grade n-propanol for this application is checked by ICP-MS for sodium, potassium, calcium, magnesium, and iron, with typical acceptance limits at or below 10 ppb for each critical metal and chloride at or below 100 ppb by ion chromatography. Non-volatile residue is measured gravimetrically after evaporation at 105°C, usually with a specification limit of 10 ppm or lower. Particle counters in the recirculation loop record counts per millilitre at ≥0.3 µm, and the chemical distribution system uses 0.05 µm membrane filters at point of use. In production environments where cleanroom relative humidity exceeds 60%, the final rinse module is enclosed or residence time is reduced to limit water uptake into the solvent recirculation tank.
| Parameter | Analytical Method | Representative Electronic-Grade Limit |
|---|---|---|
| Purity | GC-FID | ≥99.9 area% |
| Water | ASTM E203 | ≤500 ppm |
| Non-volatile residue | Gravimetric after 105°C evaporation | ≤10 ppm |
| Chloride | Ion chromatography | ≤100 ppb |
| Sodium | ICP-MS | ≤10 ppb |
| Iron | ICP-MS | ≤10 ppb |
| Particles ≥0.3 µm | Laser particle counter | ≤100 count/mL |
These values reflect representative supplier acceptance windows for semiconductor and display-grade n-propanol; front-end wafer fabs and flat-panel manufacturers may impose tighter thresholds for specific metals and particles.
As 01005 chip components reduce standoff heights to below 100 µm, the cleaning solvent under low-clearance packages must combine low surface tension with controlled metal content to avoid creating new ionic residues. In printed circuit board assembly, mixed no-clean and water-soluble solder pastes leave flux residues that range from rosin-based films to organic acid residues. N-propanol electronic grade is used in inline defluxing systems with spray-in-air or spray-under-immersion configurations; it dissolves rosin residues more slowly than solvent blends containing glycol ethers or hydroxyesters, but its final cleanliness level is suitable when ionic contamination limits are tightened after reflow. Spray pressure in production defluxing equipment typically ranges from 40 psi to 60 psi, with solvent temperature maintained below 40°C in open systems because n-propanol has a flash point of 23°C. Closed or nitrogen-inerted systems can operate at higher temperatures but require explosion-proof electrical classification and continuous lower explosive limit monitoring. The relevant ionic cleanliness test is IPC-TM-650 2.3.25, and J-STD-001 class 3 assemblies are commonly controlled at less than 1.56 µg NaCl equivalence per square centimetre. For bottom-terminated components, the spray nozzle arrangement must include angled jets; vertical spray alone cannot deliver solvent into the gap between the component body and the soldermask. Production experience indicates that no-clean flux residues may require a higher concentration of active solvent or longer residence time; published data for pure n-propanol performance in these tight gaps is limited. The operational boundary is narrow: n-propanol alone is not a universal defluxing agent, and rosin-heavy or thermally aged no-clean residues often require a saponifier or a co-solvent with stronger solvency.
After amine-based photoresist stripper chemistry has removed bulk resist from high-dose ion-implanted wafers, residual stripper and dissolved polymer can remain inside high-aspect-ratio contact holes. Single-wafer spray processors configured with an intermediate solvent rinse use n-propanol electronic grade to flush stripper and polymer residues before the final deionized water rinse. The solvent is dispensed through a swing-arm spray bar at a flow rate of 0.5–1.5 L/min while the wafer rotates at 300–800 rpm. Without this intermediate rinse, stripper carryover can form organic-amine residues when the wafer is rinsed with water, resulting in contact-bottom defects. The n-propanol rinse is particularly relevant where water-based stripper formulations leave long-chain organic acids that can redeposit on exposed metal lines. The rinse step is typically 20–45 s, and the subsequent deionized water rinse must begin before the alcohol film dries to avoid redeposition. Wetted surfaces in the spray processor are specified as 316L stainless steel with EPDM or PTFE seals, and the exhaust must be sized for flammable vapor dilution below 25% of the lower explosive limit. Front-end wafers have exposed source/drain regions that can capture mobile ions, so electronic-grade solvent is sampled at point of use for water and metal contamination; typical acceptance limits for iron and copper are at or below 5 ppb in critical implant-related rinse steps.
High-purity gas delivery systems for semiconductor fabs use electropolished 316L stainless steel tubes, valves, and fittings that must be free of machining oils, fingerprints, and particle residues before installation. The final solvent rinse uses electronic-grade n-propanol in an ultrasonic bath operating at 40 kHz, followed by forced hot nitrogen drying. The solvent is selected because it leaves low non-volatile residue and does not introduce the chloride or sulfate species that would initiate pitting in the oxide passivation layer. Parts are immersed for 10–20 min at 20–30°C, rinsed with fresh solvent dispensed through a point-of-use 0.05 µm filter, and then dried with filtered nitrogen at 60–80°C. Cleanliness verification includes ultraviolet inspection under 365 nm light and particle counting of the final rinse solvent; the rinse solvent is then analyzed by ICP-MS for metallic contaminants. Operational limit: because n-propanol has a flash point of 23°C, ultrasonic tanks must be located in a ventilated enclosure with continuous lower explosive limit sensors and proper bonding. The use of n-propanol for this application is limited to low-residue organic contamination; heavy machining oils require a first-stage hydrocarbon degreasing step before the electronic-grade alcohol rinse.
Electronic-grade n-propanol is also used as a final rinse for quartz glassware in cleanroom analytical laboratories preparing samples for ultratrace metal analysis; only solvents with sodium and potassium concentrations below 10 ppb are permitted because residual alkali ions produce false positives in ICP-MS.
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N-Propanol Electronic Grade, designated by representative model code NPA-EL-99.9, is a linear C3 primary alcohol with CAS number 71-23-8 and molecular weight 60.10 g/mol. It is supplied for semiconductor wet processing, flat-panel display surface preparation, and microelectromechanical systems cleaning where residual ion, water, and particle budgets are tighter than those for industrial-grade solvents. The product acceptance profile is built around an assay of ≥99.9 area% by gas chromatography with flame ionization detection, water below 500 ppm by ASTM E203, color below 10 Pt-Co by ASTM D1209, non-volatile residue below 10 ppm by ASTM D1353, and a trace-metal panel in which sodium, potassium, iron, copper, zinc, aluminium, chromium, and nickel are each controlled below 10 ppb by inductively coupled plasma mass spectrometry after acid digestion and evaporation. Density at 20 °C is typically 804 kg/m³ by ASTM D4052, and liquid-borne particles at ≥0.2 µm are generally limited to ≤100 counts/mL by optical particle counting with point-of-use filtration rated at 0.05 µm. These limits are representative supplier acceptance windows, not a single ISO specification; exact certificates of analysis vary by packaging configuration and production lot.
| Parameter | Typical electronic grade limit | Reference method |
|---|---|---|
| n-Propanol assay | ≥99.9 area% | GC-FID |
| Water | ≤500 ppm | ASTM E203 |
| Color | ≤10 Pt-Co | ASTM D1209 |
| Non-volatile residue | ≤10 ppm | ASTM D1353 |
| Acidity | ≤20 ppm as acetic acid | ASTM D1613 |
| Trace metal panel Na, K, Fe, Cu, Zn, Al, Cr, Ni | ≤10 ppb each | ICP-MS after digestion |
| Particle count ≥0.2 µm | ≤100 counts/mL | Liquid optical particle counter |
In contrast to isopropanol, the linear n-propyl structure raises the normal boiling point to 97.2 °C and lowers the vapour pressure at 20 °C to approximately 1.99 kPa. The flash point measured by closed cup is 22 °C, compared with 12 °C for isopropanol, which reduces evaporation-rate-driven concentration changes in open recirculating baths. The higher boiling point and lower vapour pressure make the solvent suitable for intermediate rinse steps where a longer liquid residence time is required before nitrogen-purge drying; however, the same properties extend dry time in single-wafer spin tools and demand higher exhaust flow or heated nitrogen to avoid residual condensate on chamber walls.
In single-wafer cleaning, the liquid is dispensed through a 0.05 µm point-of-use membrane filter at 21–24 °C onto a 300 mm wafer rotating at 800–1500 rpm, followed by a dry step at 2800–3000 rpm. The viscosity of n-propanol at 20 °C is about 2.26 mPa·s, roughly 10% higher than isopropanol at 2.04 mPa·s, while its surface tension is 23.7 mN/m versus 21.7 mN/m. The combination of slower evaporation and higher viscosity alters the boundary-layer drainage time; residual droplets on high-aspect-ratio structures must be removed with a longer nitrogen curtain or an elevated wafer temperature, typically not exceeding 35 °C to avoid thermal stress on low-k dielectric films. Published data for specific pattern geometries remains limited; wet-bench process windows are often established by scatterometry after structural line collapse testing rather than by a universal dry-time model.
The pressure drop across point-of-use membrane filters follows the Hagen-Poiseuille relationship for laminar flow, ΔP proportional to viscosity, so the approximately 10% higher viscosity of n-propanol relative to isopropanol at 20 °C increases initial filter differential pressure proportionally when flow rate and temperature are held constant. This is not a defect; it is a fluid-specific boundary that must be compensated by filter area sizing or by reducing dispense flow in a 300 mm single-wafer rinse module. The exact adjustment is tool-specific and should be based on measured differential pressure rather than on solvent substitution tables.
Marangoni drying using n-propanol-water mixtures requires monitoring of surface tension differential across the meniscus. The lower vapour pressure of n-propanol reduces the cooling-induced condensation rate on the substrate compared with isopropanol, which can be beneficial in reducing pattern collapse in 40:1 aspect-ratio trench structures. The optimum solvent concentration in the rinse bath is typically shifted lower by 2–5 volume percent relative to IPA, depending on carrier gas temperature and relative humidity; this is an operational adjustment, not a fixed equivalence. Production-scale experience on 300 mm single-wafer tools indicates that filter differential pressure is the early indicator of bubbles or viscosity-related flow instability when switching from isopropanol to n-propanol, and that venting of the dispense line must be completed before wafer lot start.
When n-propanol electronic grade replaces isopropanol in back-end flux cleaning or wafer-level packaging, the solvent's lower evaporation rate can increase exposure time for removal of rosin-based flux residues and edge-bead polymer debris. The linear alcohol is miscible with water and many polar organic solvents, but it has lower solvency for certain non-polar photoresist edge polymers than acetone or propylene glycol monomethyl ether acetate. In such operations it is used as a co-solvent rather than a direct drop-in solvent; typical blends contain 20–40 volume percent n-propanol with water or a high-flash-point ester, adjusted by residue dissolution screening. The product is not recommended for immersion stripping of heavily cross-linked negative-tone resists unless validated on the specific resist formulation because the primary alcohol can promote swelling rather than dissolution. Published test data for this specific application configuration is limited; qualification runs on production lots are required.
| Property | N-Propanol | Isopropanol | Ethanol | Acetone |
|---|---|---|---|---|
| Boiling point | 97.2 °C | 82.5 °C | 78.4 °C | 56.2 °C |
| Flash point, closed cup | 22 °C | 12 °C | 13 °C | -20 °C |
| Vapour pressure at 20 °C | 1.99 kPa | 4.4 kPa | 5.8 kPa | 24.7 kPa |
| Surface tension at 20 °C | 23.7 mN/m | 21.7 mN/m | 22.1 mN/m | 23.1 mN/m |
| Viscosity at 20 °C | 2.26 mPa·s | 2.04 mPa·s | 1.2 mPa·s | 0.32 mPa·s |
| Dielectric constant at 25 °C | 20.1 | 18.3 | 24.5 | 20.7 |
Compared with ethanol, n-propanol has a lower dielectric constant at 25 °C, 20.1 versus 24.5, which shifts effectiveness for ionic residue dissolution; compared with acetone, n-propanol is far less volatile with a flash point of 22 °C versus -20 °C, making it safer for open-cassette handling under local exhaust but slower to dry. These differences mean n-propanol electronic grade is not a universal replacement; it is selected when a lower evaporation rate and controlled water content are more critical than maximum drying speed.
General-purpose n-propanol is not interchangeable with this product. Technical-grade material commonly carries water above 500 ppm, non-volatile residue above 10 ppm, and trace-metal concentrations in the parts-per-million range, which create haze, electrochemical migration, and gate-oxide integrity risk in semiconductor structures. The electronic-grade material imposes tighter acceptance windows through controlled distillation, fluoropolymer contact surfaces, and nitrogen-blanketed packaging. In production lines, the cost difference is justified only when the cleaning step directly contacts exposed metal or dielectric interfaces; for non-critical general washing, lower-purity solvent may be acceptable under engineering review.
Incoming inspection on a high-volume fabrication line routinely includes water content by ASTM E203 and trace-metal screening by ICP-MS on every lot after tanker decant or canister change. Particle counts at 0.2 µm are sampled from the point-of-use line after a 30-min flush, because initial dispense after tool idle can show transient particle elevation from valve wear. Batch-to-batch variance in n-propanol electronic grade is lower than technical-grade material but not zero; release values for water typically range between 120 and 380 ppm across a production campaign when nitrogen-blanketed storage is maintained. Process engineers should not treat the 500 ppm limit as a target because water marks on copper/low-k patterned wafers have been observed before the release limit is reached; an incoming control threshold of 300 ppm is common in front-end wet processing. This is a practical boundary, not a standards requirement.
N-Propanol electronic grade is hygroscopic; when stored in partially emptied containers at relative humidity above 60%, water content can migrate toward the 500 ppm release limit and exceed it within a production shift if the container headspace is not blanketed with dry nitrogen. Pressure-dispense canisters of 316L electropolished stainless steel or fluoropolymer-lined vessels are required for high-purity use, and point-of-use filtration membranes should be polytetrafluoroethylene or polyvinylidene fluoride with a 0.05 µm retention rating. Avoid contact with strong oxidizers such as concentrated nitric acid and hydrogen peroxide in confined recirculation loops because exothermic oxidation can generate propionaldehyde and carbon dioxide and may exceed the static pressure rating of small-volume filter housings. The product is incompatible with strong reducing agents and anhydrous acids in uncontrolled stoichiometric contact; storage near open ignition sources is prohibited because closed-cup flash point is 22 °C and the vapour can travel to an ignition source.
Packaging is typically supplied in 1 L fluoropolymer-coated glass bottles, 10 L high-density polyethylene canisters with solvent-compatible fluoropolymer liners, and 200 L electropolished stainless steel drums, all nitrogen purged to maintain low water and oxygen headspace. Container closure integrity is tested by helium leak detection or pressure decay; the chosen package depends on fab logistics and chemical usage rate. Model suffixes often encode packaging and purity, such as NPA-EL-99.9-10L. At point of use, the solvent is dispensed through inert pump heads and filters; the most common production-line failure mode during substitution is not solvent purity but dispense pump cavitation when the solvent is heated above 30 °C without sufficient back-pressure.
The selection between n-propanol and isopropanol in drying applications is not governed solely by boiling point. Surface tension gradients during Marangoni drying are lower when the alcohol vapour concentration is insufficient to compensate the higher boiling point, which can increase the probability of water-film breakup on hydrophobic low-k sidewalls. In those processes, n-propanol is sometimes blended with a faster-evaporating alcohol or ester to maintain the required meniscus velocity. Such blends alter flash point and viscosity; they must be requalified for flammability classification and pressure drop before release to a production tool.
At release, the density measured by ASTM D4052 at 20 °C can be used as a rapid lot-integrity check because n-propanol density is about 804 kg/m³, while the presence of water at 500 ppm shifts density by only a few parts per million. Karl Fischer titration per ASTM E203 is the control method for water, and acid titration per ASTM D1613 detects acidity introduced during storage. Liquid particle counters calibrated with polystyrene latex spheres at an extinction threshold of 0.2 µm are used at point-of-use to monitor filter breakthrough after cartridge change or tool maintenance. Published data for specific wafer-pattern configurations is limited; the most defensible qualification approach is lot-controlled analytical release combined with on-tool particle and water-mapping studies under the actual exhaust and dispense conditions.